| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,357 pcs
|
1357 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS606NH6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for switching and amplification applications requiring up to 60V drain-source voltage and 3.2A continuous drain current.
The device features a maximum drain-source on-resistance of 60 mOhm at 3.2A and 10V gate drive. It has a maximum gate charge of 5.6 nC at 5V and input capacitance of 657 pF at 25V. The gate threshold voltage is 2.3V maximum at 15 µA drain current. Operating junction temperature range is -55°C to 150°C.
Packaged in a TO-243AA (PG-SOT89-4-2) surface mount package, it is suitable for automated assembly. The device is supplied in tape and reel packaging (standard package quantity not verified).
Typical applications include load switching, DC-DC converters, and power management in portable and industrial electronics. The low on-resistance and moderate gate charge make it efficient for battery-powered designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.92 | $0.92 |
| 10+ | $0.66 | $0.66 |
| 100+ | $0.41 | $0.41 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.24 | $0.24 |
| 2,000+ | $0.21 | $0.21 |
| 5,000+ | $0.19 | $0.19 |
| 10,000+ | $0.17 | $0.17 |
| 25,000+ | $0.15 | $0.15 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
TO-243AA (PG-SOT89-4-2).
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (unverified).
3.2 A at ambient temperature (Ta).
2.3 V maximum at 15 µA drain current.
60 mOhm maximum at 3.2 A and 10 V gate-source voltage.