DistyParts Icon
BSS308PE The Infineon BSS308PE is a P-channel OptiMOS™ P3 small-signal MOSFET. It features a -30V drain-source breakdown voltage and is housed in a PG-SOT-23 package.
Mfr Part #:

BSS308PE

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BSS308PE is a P-channel OptiMOS™ P3 small-signal MOSFET. It features a -30V drain-source breakdown voltage and is housed in a PG-SOT-23 package.
✓ Total Stock: 1,383 pcs
$ Price Range: $2.40

BSS308PE Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,383 pcs
On Request
1383 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS308PE Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Power Dissipation
Reverse Recovery Time
Tape & Reel
View Similar Products (0)

BSS308PE Description

Short technical summary and product information.

The Infineon BSS308PE is a P-channel, enhancement-mode, logic-level MOSFET from the OptiMOS™ P3 family. It is designed for small-signal and small-power applications.

 

Key electrical characteristics include a drain-source breakdown voltage of -30V and a maximum on-state resistance (RDS(on)) of 80mΩ at VGS=-10V and ID=-2A. The gate threshold voltage (VGS(th)) ranges from -2.0V to -1.0V. Dynamic characteristics such as input capacitance (Ciss) are typically 376pF, and output capacitance (Coss) is typically 196pF.

 

This MOSFET is qualified according to AEC Q101, ensuring high reliability for automotive and industrial applications. It is also 100% lead-free and RoHS compliant, with halogen-free material composition according to IEC61249-2-21.

 

The BSS308PE is supplied in a PG-SOT-23 package, suitable for surface-mount designs. It is provided on tape and reel for automated assembly processes.

BSS308PE Quick Information

Product Type: MOSFET
Series: OptiMOS™ P3
Canonical Name: Infineon BSS308PE P-channel MOSFET
Subcategory: Small Signal MOSFET

BSS308PE Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: 100% lead-free

BSS308PE Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS308PE Features

  • P-channel enhancement mode MOSFET
  • Logic level gate drive capability
  • -30V drain-source breakdown voltage
  • Low on-state resistance (80mΩ max)
  • AEC Q101 qualified for high reliability

BSS308PE Applications

  • Suitable for small-signal applications
  • Ideal for logic-level gate drive
  • Used in automotive systems
  • General purpose switching tasks

BSS308PE FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the BSS308PE?

-30V

What is the maximum on-state resistance (RDS(on)) for the BSS308PE?

80mΩ at VGS=-10V, ID=-2A

What package type is the BSS308PE MOSFET supplied in?

PG-SOT-23

Is the BSS308PE MOSFET AEC Q101 qualified?

Yes

What is the operating temperature range for the BSS308PE?

-55°C to 150°C

Home
Account

Categories