| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
585,000 pcs
|
585000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS214NWH6327 is an N-Channel enhancement mode MOSFET designed for low-voltage switching applications. With a maximum drain-source voltage of 20V and continuous drain current of 1.5A, it offers a typical on-resistance of 140mΩ at 4.5V gate drive. The device features a low gate charge of 0.8nC and input capacitance of 143pF, enabling efficient high-frequency operation. It is suitable for load switching, DC-DC converters, and power management circuits. The MOSFET is housed in a compact SOT-323 (SC-70) surface-mount package, making it ideal for space-constrained designs. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 500mW. The device is RoHS3 compliant and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 12,000+ | $0.10 | $0.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
SC-70, SOT-323 (PG-SOT323-3-2).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
1.5A at Ta.
140mΩ maximum at 1.5A, 4.5V.
1.2V maximum at 3.7µA.