BSS169H6327 The Infineon Technologies BSS169 H6327 is an N-Channel MOSFET with a 100V drain-source breakdown voltage and 170mA continuous drain current. It is supplied in a SOT-23 package.
Mfr Part #:

BSS169H6327

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon Technologies BSS169 H6327 is an N-Channel MOSFET with a 100V drain-source breakdown voltage and 170mA continuous drain current. It is supplied in a SOT-23 package.
✓ Total Stock: 86,350 pcs
$ Price Range: $2.40

BSS169H6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
86,350 pcs
86350 pcs On Request 1 On Request On Request 20+ On Request On Request

BSS169H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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BSS169H6327 Description

Short technical summary and product information.

The Infineon Technologies BSS169 H6327 is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 100V and can handle a continuous drain current of up to 170mA. The device offers a maximum power dissipation of 360mW.

 

Key electrical characteristics include an on-state resistance of 5.3Ω at 0V and 2.9Ω at 10V, a gate charge of 2.1nC at 7V, and a gate-source threshold voltage of 1.8V. The input capacitance (Ciss) is rated at 51pF at 25V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is available in a SOT-23 or SOT-23-3 package, suitable for both SMD and through-hole mounting. The component is compliant with RoHS3 standards.

BSS169H6327 Quick Information

Product Type: MOSFET
Canonical Name: BSS169 H6327 N-Channel MOSFET
Subcategory: N-Channel

BSS169H6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS169H6327 Estimated Pricing

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1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS169H6327 Features

  • 100V drain-source breakdown voltage.
  • 170mA continuous drain current.
  • Low on-state resistance.
  • 360mW maximum power dissipation.
  • SOT-23 package for SMD mounting.

BSS169H6327 Applications

  • Suitable for general switching applications.
  • Ideal for low-power circuit designs.
  • Used in industrial control systems.
  • Applicable in power management circuits.

BSS169H6327 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the continuous drain current?

The continuous drain current is 170mA.

What is the maximum power dissipation?

The maximum power dissipation is 360mW.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is this MOSFET in?

This MOSFET is available in a SOT-23 or SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, this MOSFET is RoHS3 Compliant.

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