| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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86,350 pcs
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86350 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The Infineon Technologies BSS169 H6327 is an N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 100V and can handle a continuous drain current of up to 170mA. The device offers a maximum power dissipation of 360mW.
Key electrical characteristics include an on-state resistance of 5.3Ω at 0V and 2.9Ω at 10V, a gate charge of 2.1nC at 7V, and a gate-source threshold voltage of 1.8V. The input capacitance (Ciss) is rated at 51pF at 25V.
This MOSFET operates within a temperature range of -55°C to 150°C. It is available in a SOT-23 or SOT-23-3 package, suitable for both SMD and through-hole mounting. The component is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The continuous drain current is 170mA.
The maximum power dissipation is 360mW.
The operating temperature range is -55°C to 150°C.
This MOSFET is available in a SOT-23 or SOT-23-3 package.
Yes, this MOSFET is RoHS3 Compliant.