BSS159NH6327XTSA2 N-Channel Depletion Mode MOSFET, 60V drain-source voltage, 230mA continuous drain current, surface mount SOT23-3 package. Manufactured by Infineon Technologies.
Mfr Part #:

BSS159NH6327XTSA2

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel Depletion Mode MOSFET, 60V drain-source voltage, 230mA continuous drain current, surface mount SOT23-3 package. Manufactured by Infineon Technologies.
✓ Total Stock: 22,413 pcs
$ Price Range: $0.10 - $0.61

BSS159NH6327XTSA2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,033 pcs
22033 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
380 pcs
380 pcs On Request 1 On Request On Request On Request On Request On Request

BSS159NH6327XTSA2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSS159NH6327XTSA2 Description

Short technical summary and product information.

The BSS159NH6327XTSA2 is an N-channel depletion mode MOSFET from Infineon Technologies, part of the SIPMOS small-signal transistor family. Designed for normally-on operation, it requires a negative gate voltage to turn off. Key electrical specifications include a drain-source voltage of 60V, continuous drain current of 230mA at 25°C, and pulsed drain current capability of 920mA. The device features low on-resistance: 3.9Ω typical (8Ω max) at VGS=0V and 1.7Ω typical (3.5Ω max) at VGS=10V. Gate threshold voltage ranges from -3.5V to -2.4V, with sorted bands available for tighter tolerance. Switching performance is optimized with low gate charge (1.4nC typical) and fast switching times (turn-on delay 3.1ns, rise time 2.9ns, turn-off delay 9ns, fall time 9ns). The reverse diode supports a high dv/dt of 6 kV/µs. The device is qualified to AEC Q101 for automotive applications and is RoHS compliant, halogen-free, and lead-free.

 

The MOSFET is housed in a PG-SOT23 surface mount package (equivalent to TO-236-3, SC-59, SOT-23-3). Maximum power dissipation is 360mW at 25°C ambient. Operating junction temperature range is -55°C to 150°C. The part is available in tape and reel packaging with 3000 pieces per reel. Typical applications include automotive electronic control units, normally-on switches, load switches, signal switching, and current source circuits.

BSS159NH6327XTSA2 Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: Infineon Technologies BSS159NH6327XTSA2 N-Channel Depletion Mode MOSFET
Subcategory: Depletion Mode MOSFET

BSS159NH6327XTSA2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS159NH6327XTSA2 Estimated Pricing

Qty Low High
1+ $0.61 $0.61
10+ $0.37 $0.37
100+ $0.24 $0.24
500+ $0.18 $0.18
1,000+ $0.16 $0.16
3,000+ $0.14 $0.14
6,000+ $0.12 $0.12
9,000+ $0.11 $0.11
24,000+ $0.10 $0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS159NH6327XTSA2 Features

  • N-channel depletion mode MOSFET.
  • Rated for 60V drain-source voltage.
  • Continuous drain current 230mA.
  • Low on-resistance 3.5Ω at 10V.
  • AEC-Q101 qualified for automotive.

BSS159NH6327XTSA2 Applications

  • Ideal for automotive electronic control units.
  • Used in normally-on switch applications.
  • Suitable for signal switching and load switching.
  • Applicable in current source circuits.
  • Used in battery management systems.

BSS159NH6327XTSA2 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of BSS159NH6327XTSA2?

The drain-source breakdown voltage is 60V.

What package type is the BSS159NH6327XTSA2 available in?

It is available in a PG-SOT23 surface mount package, equivalent to TO-236-3, SC-59, and SOT-23-3.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the BSS159NH6327XTSA2 RoHS compliant?

Yes, it is RoHS3 compliant, 100% lead-free, and halogen-free.

What is the gate threshold voltage of this device?

The gate threshold voltage ranges from -3.5V (minimum) to -2.4V (maximum) with a typical value of -2.8V at VDS=3V and ID=26µA.

Is the BSS159NH6327XTSA2 qualified for automotive applications?

Yes, it is qualified according to AEC Q101.

What is the on-resistance at VGS=10V?

The maximum on-resistance at VGS=10V and ID=160mA is 3.5Ω.

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