Mfr Part #:

BSS138WH6327XTSA1

Infineon BSS138W N-channel logic level MOSFET. 60V drain-source breakdown voltage, 280mA continuous drain current, 500mW power dissipation, in PG-SOT323 package.

✓ Total Stock: 60,000 pcs

$ Price Range: $0.07 - $0.40

BSS138WH6327XTSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Seba Components ✓ Non-Authorised Inventory information	60,000 pcs On Request	60000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

BSS138WH6327XTSA1 Description

Short technical summary and product information.

The Infineon BSS138WH6327XTSA1 is a single N-channel enhancement mode logic level MOSFET from the SIPMOS family. It features a drain-source breakdown voltage of 60V and a continuous drain current of 280mA at 25°C. The device offers a typical on-state resistance of 2.1Ω at VGS=10V and ID=0.2A, with a gate threshold voltage between 0.6V and 1.4V.

This MOSFET is rated for pulsed drain currents up to 1.12A and can dissipate up to 500mW at 25°C ambient. It has a maximum junction temperature of 150°C. The device is optimized for low gate drive voltages and includes dv/dt rated reverse diode performance.

The BSS138W is supplied in a PG-SOT323 surface mount package (SC-70/SOT-323 footprint). The H6327 suffix indicates a 3000 piece reel packaging. The part is halogen-free per IEC61249-2-21 and qualified to AEC Q101 automotive standards.

BSS138WH6327XTSA1 Quick Information

Product Type: Single N-Channel MOSFET

Series: BSS138W

Canonical Name: Infineon Technologies BSS138W N-Channel MOSFET

Subcategory: Small Signal MOSFET

BSS138WH6327XTSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

BSS138WH6327XTSA1 Estimated Pricing

Qty	Low	High
1+	$0.40	$0.40
10+	$0.29	$0.29
100+	$0.21	$0.21
500+	$0.14	$0.14
1,000+	$0.12	$0.12
3,000+	$0.07	$0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138WH6327XTSA1 Features

N-channel logic level enhancement mode MOSFET.
60V drain-source breakdown voltage rating.
280mA continuous drain current at 25°C.
Low typical on-resistance of 2.1 ohm.
Qualified to AEC Q101 automotive standard.

BSS138WH6327XTSA1 Applications

Load switch for low power DC circuits.
Gate driver for other power semiconductors.
Signal level shifting and switching applications.
Battery management in portable devices.
Automotive sensor and control interfaces.

BSS138WH6327XTSA1 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of this MOSFET?

The drain-source breakdown voltage is 60V minimum at 250µA drain current.

What is the maximum continuous drain current?

The continuous drain current is 280mA at 25°C ambient temperature.

What is the package type and mounting style?

It is supplied in a PG-SOT323 (SC-70, SOT-323) surface mount package.

Is this device RoHS compliant?

Yes, it is RoHS3 compliant and has Pb-free lead-plating.

What is the operating temperature range?

It operates from -55°C to 150°C junction temperature.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
AEC Qualified	Yes
Automotive Grade	Yes
Current	280 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.0 nC (typ) / 1.5 nC (max)
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	3 pF (min) / 32 pF (typ) / 43 pF (max)
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	2.1 Ω (typ) / 3.5 Ω (max)
Reverse Recovery Time (trr)	8.3 ns (typ) / 12.4 ns (max)
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	PG-SOT323
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Style	SMD (Gull-wing)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	0.6V / 1.0V / 1.4V