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BSS138NH6433XTMA1 The Infineon BSS138NH6433XTMA1 is an N-Channel MOSFET designed for small signal applications. It features a 60V drain-source breakdown voltage and a 230mA continuous drain current.
Mfr Part #:

BSS138NH6433XTMA1

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon BSS138NH6433XTMA1 is an N-Channel MOSFET designed for small signal applications. It features a 60V drain-source breakdown voltage and a 230mA continuous drain current.
✓ Total Stock: 11,060 pcs
$ Price Range: $0.44

BSS138NH6433XTMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
11,020 pcs
On Request
11020 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
40 pcs
$0.44 ℹ
Qty Price
0+ 0.44
40 pcs $0.44
QtyPrice
0+ 0.44
1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS138NH6433XTMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Gate Charge
Height
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Number of Channels
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BSS138NH6433XTMA1 Description

Short technical summary and product information.

The Infineon BSS138NH6433XTMA1 is a small-signal N-Channel MOSFET. It offers a drain-source breakdown voltage of 60V and a continuous drain current of 230mA. The device has a typical on-resistance of 3.5 Ohms and a gate-source threshold voltage of 1.4V.

 

This MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation of 360mW. It is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained applications. The typical rise and fall times are 3ns and 8.2ns respectively, with turn-on and turn-off delay times of 2.3ns and 6.7ns.

 

Key electrical characteristics include a typical gate charge of 1nC and a minimum forward transconductance of 0.1S. The BSS138NH6433XTMA1 is part of the BSS138 series from Infineon Technologies.

BSS138NH6433XTMA1 Quick Information

Product Type: MOSFET
Series: BSS138
Canonical Name: Infineon BSS138NH6433XTMA1 N-Channel MOSFET
Subcategory: N-Channel MOSFET

BSS138NH6433XTMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS138NH6433XTMA1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138NH6433XTMA1 Features

  • 60V drain-source breakdown voltage.
  • 230mA continuous drain current.
  • 3.5 Ohm typical on-resistance.
  • SOT-23-3 surface-mount package.
  • N-Channel MOSFET for small signals.

BSS138NH6433XTMA1 Applications

  • Suitable for general switching applications.
  • Ideal for small signal amplification.
  • Used in space-constrained designs.
  • Component in discrete semiconductor circuits.

BSS138NH6433XTMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 60 V.

What is the continuous drain current?

The continuous drain current is 230 mA.

What is the typical on-resistance?

The typical on-resistance is 3.5 Ohms.

What is the gate-source threshold voltage?

The gate-source threshold voltage is 1.4 V.

What is the operating temperature range?

The operating temperature range is -55 C to +150 C.

What package is this MOSFET in?

This MOSFET is in a SOT-23-3 package.

How is this component packaged?

This component is packaged on a reel.

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