| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,750 pcs
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1750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BSS138NE6327 is a single N-Channel MOSFET with built-in diode, utilizing Metal-Oxide Semiconductor technology. It is designed for switching applications and offers a breakdown voltage of 60V.
Key electrical characteristics include a maximum drain current of 0.23A and a maximum drain-source on-resistance of 3.5 Ohms. The feedback capacitance is a maximum of 3.8 pF. This device operates in enhancement mode and is logic level compatible.
Packaged in a small outline surface mount package (R-PDSO-G3) with gull wing terminals and matte tin finish, the BSS138NE6327 has a maximum power dissipation of 0.36W. It operates within a temperature range of -55°C to 150°C.
Environmental compliance includes RoHS3 compliance and MSL 1 rating. The component is suitable for various electronic designs requiring a small signal N-Channel MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 60V.
The maximum drain current is 0.23A.
The maximum drain-source on-resistance is 3.5 Ohms.
The operating temperature range is from -55°C to 150°C.
It is in an R-PDSO-G3 surface mount package.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.