| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
300 pcs
$0.09
|
300 pcs |
$0.09
|
1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Input Capacitance | |
| Junction Temperature | |
| Mounting Type | |
| Power Dissipation |
The BSS138 is a general-purpose N-Channel MOSFET manufactured by UMW (Youtai Semiconductor). It features a Drain-Source Voltage (VDS) of 50V and a Continuous Drain Current (ID) of 300mA at a Gate-Source Voltage (VGS) of 10V. The device exhibits a low On-Resistance (RDS(ON)) of less than 2.5Ω at VGS = 10V and ID = 500mA, and less than 3.5Ω at VGS = 2.5V and ID = 500mA.
Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) typically between 0.7V and 1.5V. The MOSFET has an Input Capacitance (Ciss) of 50pF, Output Capacitance (Coss) of 25pF, and Reverse Transfer Capacitance (Crss) of 8pF, all measured at 1MHz. Switching characteristics include a typical Turn-On Delay Time (td(on)) and Turn-Off Delay Time (td(off)) of 20ns.
This MOSFET is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained designs. It operates within a wide temperature range, with a Junction Temperature (TJ) up to 150°C and Storage Temperature Range (Tstg) from -55°C to 150°C. The device also has an ESD rating of 1.5KV HBM.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 50V.
The maximum continuous drain current (Id) is 300mA at VGS = 10V.
The maximum static drain-source on-resistance (Rds(on)) is 2.5Ω at VGS = 10V and 3.5Ω at VGS = 2.5V.
The typical gate threshold voltage (Vgs(th)) is 1.5V.
The BSS138 is available in a SOT-23 surface mount package.
The maximum junction temperature (Tj) is 150°C and the storage temperature range is -55°C to 150°C.
The maximum power dissipation (Pd) is 300mW at Ta = 25°C.