BSS131H6327XTSA1 N-Channel MOSFET with 240V drain-source breakdown voltage and 110mA continuous drain current. Surface mount package SOT23-3.
Mfr Part #:

BSS131H6327XTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 240V drain-source breakdown voltage and 110mA continuous drain current. Surface mount package SOT23-3.
✓ Total Stock: 586 pcs
$ Price Range: $0.09 - $0.51

BSS131H6327XTSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
536 pcs
536 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
50 pcs
50 pcs On Request 1 On Request On Request On Request On Request On Request

BSS131H6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSS131H6327XTSA1 Description

Short technical summary and product information.

The BSS131H6327XTSA1 is an N-Channel enhancement mode MOSFET from Infineon's SIPMOS series. It features a drain-source breakdown voltage of 240V and a continuous drain current of 110mA at 25°C. The device offers low on-resistance of 14Ω maximum at VGS=10V and ID=0.1A, making it suitable for low-power switching applications.

 

This MOSFET is logic level compatible with a gate threshold voltage range of 0.8V to 1.8V. It provides fast switching with typical turn-on delay of 3.3ns and fall time of 64.5ns. The device is rated for power dissipation up to 360mW and operates over a junction temperature range of -55°C to 150°C.

 

The BSS131H6327XTSA1 is housed in a PG-SOT23 surface mount package, which is also known as TO-236-3 or SC-59. It is RoHS compliant, halogen-free, and qualified to AEC Q101 for automotive applications. The part is available in tape and reel packaging for automated assembly.

BSS131H6327XTSA1 Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: Infineon BSS131H6327XTSA1 N-Channel MOSFET
Subcategory: Single MOSFET

BSS131H6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS131H6327XTSA1 Estimated Pricing

Qty Low High
1+ $0.51 $0.51
10+ $0.31 $0.31
100+ $0.21 $0.21
500+ $0.13 $0.13
1,000+ $0.12 $0.12
3,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS131H6327XTSA1 Features

  • N-Channel enhancement mode MOSFET.
  • 240V drain-source breakdown voltage.
  • 110mA continuous drain current at 25°C.
  • Low on-resistance: 14Ω max at 10V.
  • Surface mount SOT23-3 package.

BSS131H6327XTSA1 Applications

  • Ideal for low-power switching circuits.
  • Suitable for automotive electronics (AEC Q101).
  • Used in DC-DC converters and load switches.
  • Logic level gate drive compatible.

BSS131H6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

240V minimum.

What is the continuous drain current?

110mA at 25°C ambient temperature.

What is the package type?

PG-SOT23 (also known as TO-236-3, SC-59, SOT-23-3).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is it RoHS compliant?

Yes, RoHS compliant with Pb-free lead-plating.

What is the gate threshold voltage?

0.8V minimum, 1.4V typical, 1.8V maximum at ID=56µA.

Is it AEC Q101 qualified?

Yes, qualified according to AEC Q101.

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