| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,880 pcs
|
11880 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 2019 | On Request | On Request | |
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
310 pcs
|
310 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology |
The Infineon BSS131H6327XTSA1 is an N-Channel MOSFET belonging to the SIPMOS® series. It is designed for applications requiring a drain-source voltage (Vdss) of up to 240V and a continuous drain current (Id) of 110mA at 25°C.
Key electrical characteristics include a maximum gate threshold voltage (Vgs(th)) of 1.8V at 56µA, a maximum gate charge (Qg) of 3.1nC at 10V, and a maximum input capacitance (Ciss) of 77pF at 25V. The on-resistance (Rds On) is a maximum of 14 Ohms at 100mA and 10V. The device operates with a gate-source voltage (Vgs) up to ±20V and has a maximum power dissipation of 360mW at ambient temperature.
This MOSFET is housed in a TO-236-3, SC-59, SOT-23-3 surface-mount package, identified as PG-SOT23 by the supplier. It operates within a temperature range of -55°C to 150°C.
The BSS131H6327XTSA1 is suitable for various switching and amplification applications in electronic circuits where its voltage and current ratings, along with its small package size, are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the BSS131H6327XTSA1 is 240V.
The continuous drain current (Id) at 25°C for the BSS131H6327XTSA1 is 110mA.
The operating temperature range for the BSS131H6327XTSA1 is -55°C to 150°C.
The BSS131H6327XTSA1 MOSFET is supplied in a TO-236-3, SC-59, SOT-23-3 surface-mount package.
The maximum gate threshold voltage (Vgs(th)) is 1.8V at 56µA.
The maximum input capacitance (Ciss) is 77pF @ 25V.