| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Power Dissipation |
The Infineon BSS127 is a high-performance N-channel SIPMOS® Small-Signal-Transistor. It is designed for enhancement mode operation and is rated for logic-level gate drive (4.5V).
Key electrical characteristics include a drain-source breakdown voltage of 600V and a maximum on-state resistance as low as 330 W at VGS=4.5V. The device also offers a typical gate threshold voltage of 2.0V.
With a continuous drain current rating of 0.021A at 25°C ambient temperature, the BSS127 is suitable for various small signal switching applications. Its dv/dt rated capability and 100% lead-free, RoHS compliant nature make it a reliable choice for modern designs.
The transistor is supplied in a PG-SOT-23 package, suitable for surface mounting. It is qualified according to AEC Q101 and is halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 600V.
The typical on-resistance is 310 W at VGS=10V and 330 W at VGS=4.5V.
The BSS127 is available in a PG-SOT-23 package.
The operating junction and storage temperature range is -55°C to 150°C.
The continuous drain current is 0.021A at 25°C and 0.017A at 70°C.
The gate threshold voltage ranges from 1.4V minimum to 2.6V maximum, with a typical value of 2.0V.
The power dissipation is 0.50W at 25°C ambient temperature.