BSS126IXTSA1 N-Channel depletion mode MOSFET from Infineon Technologies. Rated for 600V drain-source voltage and 21mA continuous drain current. Surface mount package SOT-23-3.
Mfr Part #:

BSS126IXTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel depletion mode MOSFET from Infineon Technologies. Rated for 600V drain-source voltage and 21mA continuous drain current. Surface mount package SOT-23-3.
✓ Total Stock: 13,020 pcs
$ Price Range: $0.05 - $0.35

BSS126IXTSA1 Available from 1 distributor

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✓ Non-Authorised
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BSS126IXTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Mode
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSS126IXTSA1 Description

Short technical summary and product information.

The BSS126IXTSA1 is an N-channel depletion mode MOSFET from Infineon Technologies, part of the SIPMOS small-signal transistor family. It is designed for high-voltage applications requiring normally-on operation. The device features a maximum drain-source voltage of 600V and a continuous drain current of 21mA at 25°C ambient temperature. The maximum on-resistance is 700Ω, and the gate threshold voltage is 1.6V at 8µA drain current. The MOSFET is rated for a maximum power dissipation of 500mW at 25°C and operates over a junction temperature range of -55°C to 150°C. It is housed in a surface-mount SOT-23-3 package (PG-SOT23-3-5) and is RoHS compliant, halogen-free, and lead-free. The device is fully qualified according to JEDEC for industrial applications.

BSS126IXTSA1 Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: BSS126IXTSA1 N-Channel Depletion Mode MOSFET
Subcategory: Single MOSFET

BSS126IXTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS126IXTSA1 Estimated Pricing

Qty Low High
1+ $0.35 $0.35
10+ $0.22 $0.22
100+ $0.14 $0.14
500+ $0.10 $0.10
1,000+ $0.09 $0.09
3,000+ $0.07 $0.07
6,000+ $0.07 $0.07
9,000+ $0.06 $0.06
24,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS126IXTSA1 Features

  • N-channel depletion mode MOSFET.
  • 600V maximum drain-source voltage.
  • 21mA continuous drain current at 25°C.
  • Surface mount SOT-23-3 package.
  • RoHS and halogen-free compliant.

BSS126IXTSA1 Applications

  • High-voltage normally-on switching circuits.
  • Current source and linear amplifier stages.
  • Industrial control and automation systems.

BSS126IXTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSS126IXTSA1?

The maximum drain-source voltage (VDS) is 600V.

What is the continuous drain current rating?

The continuous drain current is 21mA at 25°C ambient temperature and 17mA at 70°C.

What package is the BSS126IXTSA1 available in?

The device is available in a surface-mount SOT-23-3 package (PG-SOT23-3-5).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSS126IXTSA1 RoHS compliant?

Yes, the device is RoHS3 compliant and also halogen-free according to IEC61249-2-21.

What is the maximum on-resistance?

The maximum drain-source on-resistance is 700Ω (datasheet value).

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.6V at a drain current of 8µA.

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