| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS123LT1G is an N-Channel enhancement mode MOSFET from On Semiconductor, part of the BSS123 series. It features a maximum drain-source voltage of 100V and a continuous drain current of 170mA at 25°C, with a pulsed current capability of 680mA. The device is designed for low-power switching applications.
Key electrical characteristics include a maximum on-resistance of 6 Ohms at VGS = 10V and ID = 100mA, a gate threshold voltage range of 1.6V to 2.6V, and low input capacitance of 20pF typical. These parameters make it suitable for efficient switching in battery-powered and portable electronics.
The BSS123LT1G is offered in a surface mount SOT-23-3 (TO-236) package, with an operating junction temperature range of -55°C to 150°C. It is RoHS3 compliant and Pb-Free, meeting environmental standards for lead-free manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.30 | $0.30 |
| 10+ | $0.18 | $0.18 |
| 100+ | $0.11 | $0.11 |
| 500+ | $0.08 | $0.08 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.08 | $0.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
SOT-23-3 (TO-236) surface mount package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant and Pb-Free.