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BSS123LT1 BSS123LT1 is an N-Channel Power MOSFET from On Semiconductor with 100V drain-source breakdown voltage and 170mA continuous drain current. Housed in a surface-mount SOT-23 package.
Mfr Part #:

BSS123LT1

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
BSS123LT1 is an N-Channel Power MOSFET from On Semiconductor with 100V drain-source breakdown voltage and 170mA continuous drain current. Housed in a surface-mount SOT-23 package.
✓ Total Stock: 26,675 pcs

BSS123LT1 Available from 3 distributors

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✓ Non-Authorised
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OTL Components ✓
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21,000 pcs
On Request
21000 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
2,675 pcs
On Request
2675 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS123LT1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power Dissipation
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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BSS123LT1 Description

Short technical summary and product information.

The BSS123LT1 is an N-Channel enhancement-mode Power MOSFET designed for low-power switching applications. It features a drain-source breakdown voltage of 100V minimum and a continuous drain current of 170mA at 25°C ambient temperature, with a pulsed drain current capability of 680mA.

 

This MOSFET offers a typical on-resistance of 5Ω at VGS = 10V and ID = 100mA, with a maximum of 6Ω. The gate threshold voltage ranges from 0.8V to 2.8V at VDS = VGS and ID = 1mA. Input capacitance is typically 20pF, making it suitable for high-speed switching.

 

The device is supplied in a surface-mount SOT-23 package (TO-236-3, SC-59) and is rated for operation from -55°C to +150°C junction temperature. Maximum power dissipation is 225mW on an FR-5 board at 25°C, derating 1.8mW/°C above 25°C.

BSS123LT1 Quick Information

Product Type: Power MOSFET
Series: BSS123
Canonical Name: BSS123LT1 N-Channel Power MOSFET
Subcategory: Single MOSFET

BSS123LT1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS123LT1 Features

  • N-Channel Power MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 170mA at 25°C.
  • Low on-resistance of 6Ω maximum at VGS=10V.
  • Surface mount SOT-23 package for compact designs.
  • Operating temperature range from -55°C to +150°C.

BSS123LT1 Applications

  • Ideal for low-power load switching circuits.
  • Used in DC-DC converter and regulator designs.
  • Suitable for signal-level switching applications.
  • Applicable in portable and battery-powered devices.

BSS123LT1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the BSS123LT1?

The maximum drain-source voltage (VDSS) is 100V.

What is the continuous drain current rating?

The continuous drain current is 170mA at TA = 25°C.

What package is the BSS123LT1 available in?

It is available in a surface-mount SOT-23 package (TO-236-3, SC-59).

What is the operating temperature range?

The junction and storage temperature range is -55°C to +150°C.

Is the BSS123LT1 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

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