| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,000 pcs
|
18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,539 pcs
|
3539 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS123L is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for low-power switching and amplification applications in compact surface-mount designs. The device features a maximum drain-to-source voltage of 100V and a maximum drain current of 170mA at ambient temperature, making it suitable for small-signal switching tasks.
Key electrical characteristics include a maximum drain-source on-resistance of 6 ohms at a gate-source voltage of 10V and drain current of 170mA, and a maximum gate threshold voltage of 2V at 1mA drain current. The device supports gate drive voltages of 4.5V and 10V, allowing flexible logic-level or standard drive configurations. Maximum power dissipation is 360mW at ambient temperature.
The BSS123L is housed in a TO-236-3 (SC-59, SOT-23-3) surface-mount package, ideal for space-constrained PCB layouts. It operates over a junction temperature range of -55°C to 150°C, supporting use in a wide range of environments. The MOSFET uses metal-oxide semiconductor technology and is suitable for general-purpose switching in low-current circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.17 | $0.17 |
| 100+ | $0.13 | $0.13 |
| 500+ | $0.10 | $0.10 |
| 1,000+ | $0.09 | $0.09 |
| 3,000+ | $0.06 | $0.06 |
| 6,000+ | $0.06 | $0.06 |
| 9,000+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum drain current is 170mA at ambient temperature (Ta).
The maximum drain-source on-resistance is 6 ohms at a drain current of 170mA and gate-source voltage of 10V.
The junction operating temperature range is -55°C to 150°C.
The BSS123L is available in a TO-236-3 (SC-59, SOT-23-3) surface-mount package, with the supplier device package being SOT-23-3.
The BSS123L is marked as RoHS3 compliant, though this status is unverified and should be treated as low confidence.
The maximum gate threshold voltage is 2V at a drain current of 1mA.