| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,980 pcs
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2980 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
132 pcs
|
132 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSS123E6327 is an N-Channel enhancement-mode MOSFET from Infineon Technologies, designed for low-power switching applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 170mA at 25°C ambient temperature. The device offers a maximum drain-source on-resistance of 6 ohms at a gate drive of 10V and 170mA drain current, with a low gate charge of 2.67nC and input capacitance of 69pF for efficient switching.
This MOSFET supports gate drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 1.8V at 50µA drain current. The maximum gate-source voltage rating is ±20V, and power dissipation is rated at 360mW at ambient temperature. The device operates over a junction temperature range of -55°C to 150°C, making it suitable for a wide range of environments.
The BSS123E6327 is housed in a TO-236-3 (SC-59, SOT-23-3) surface-mount package with a PG-SOT23 supplier device package designation. Its compact size and low power requirements make it well-suited for portable and space-constrained electronic designs.
The drain-source breakdown voltage is 100V (minimum).
The maximum continuous drain current is 170mA at 25°C ambient temperature.
The maximum on-resistance is 6 ohms at 170mA drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The device is available in TO-236-3 (SC-59, SOT-23-3) surface-mount package with PG-SOT23 supplier device package.
The maximum gate threshold voltage is 1.8V at 50µA drain current.
The maximum power dissipation is 360mW at ambient temperature.