BSS123 The NXP Semiconductors BSS123 is an N-channel MOSFET featuring TrenchMOS technology for extremely fast switching. It is logic level compatible and comes in a subminiature SOT-23 package.
Mfr Part #:

BSS123

Available from 4 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors BSS123 is an N-channel MOSFET featuring TrenchMOS technology for extremely fast switching. It is logic level compatible and comes in a subminiature SOT-23 package.
✓ Total Stock: 150,589 pcs
$ Price Range: $0.99

BSS123 Available from 4 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
120,060 pcs
120060 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
27,977 pcs
27977 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,990 pcs
1990 pcs On Request 1 On Request On Request N/A On Request On Request
Non-Authorised Inventory information
562 pcs
562 pcs On Request 1 On Request On Request 10+ On Request On Request

BSS123 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
SVHC Present

BSS123 Description

Short technical summary and product information.

The BSS123 from NXP Semiconductors is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. This design ensures extremely fast switching speeds and logic level compatibility, making it suitable for various applications.

 

Key electrical specifications include a Drain-Source Voltage (VDSS) of 100 V and a Continuous Drain Current (ID) of 150 mA at 25°C. The Drain-Source On-State Resistance (RDS(ON)) is a maximum of 6 Ω when VGS is 10 V. The Gate Threshold Voltage (VGS(TO)) is typically 2 V.

 

This MOSFET is supplied in the SOT-23 subminiature surface mounting package. Its thermal characteristics include a Thermal Resistance Junction to Ambient (Rth j-a) of 500 K/W when surface mounted on an FR4 board. The operating and storage temperature range is from -55°C to 150°C.

 

Applications for the BSS123 include relay drivers, high-speed line drivers, and telephone ringers.

BSS123 Quick Information

Product Type: MOSFET
Series: Logic Level FET
Canonical Name: N-channel TrenchMOS Logic Level FET
Subcategory: N-Channel

BSS123 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS123 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS123 Features

  • N-channel TrenchMOS technology
  • Extremely fast switching speeds
  • Logic level compatible operation
  • Subminiature SOT-23 package
  • 100 V Drain-Source Voltage

BSS123 Applications

  • Ideal for low-power load switching.
  • Used in DC-DC converter circuits.
  • Suitable for general purpose switching.
  • Perfect for battery-powered devices.

BSS123 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the BSS123?

The maximum continuous drain current for the BSS123 is 150 mA.

What is the drain-source breakdown voltage of the BSS123?

The drain-source breakdown voltage of the BSS123 is a minimum of 100 V.

What is the typical gate threshold voltage for the BSS123?

The typical gate threshold voltage for the BSS123 is 2 V.

What is the on-state resistance of the BSS123 at VGS = 10 V?

The drain-source on-state resistance of the BSS123 is a maximum of 6 Ω at VGS = 10 V.

What package type is the BSS123 MOSFET supplied in?

The BSS123 MOSFET is supplied in the SOT-23 subminiature surface mounting package.

What is the operating temperature range for the BSS123?

The operating junction and storage temperature range for the BSS123 is -55°C to 150°C.

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