BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSS123 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It is designed for logic-level compatibility and offers extremely fast switching speeds.
Key electrical specifications include a drain-source voltage (VDSS) of 100V, a continuous drain current (ID) of 150mA at 25°C, and a gate threshold voltage (VGS(TO)) typically around 1V. The drain-source on-state resistance (RDS(ON)) is a maximum of 6 Ω at VGS = 10V and ID = 120mA.
This transistor is supplied in the subminiature SOT23 surface mounting package, making it suitable for space-constrained applications. Its thermal characteristics include a thermal resistance junction to ambient of 500 K/W when surface mounted on an FR4 board.
Applications for the BSS123 include relay drivers, high-speed line drivers, and telephone ringers. Its logic-level compatibility and fast switching make it a versatile component for various electronic designs.
| Qty | Low | High |
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| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage of the BSS123 is 100 V.
The gate threshold voltage of the BSS123 is approximately 1 V.
The BSS123 uses a SOT23 surface mount package.
The maximum continuous drain current is 150 mA.
The operating temperature range is from -55°C to 150°C.