| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
| On Request | On Request | 20 | On Request | On Request | On Request | On Request | On Request |
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The Siemens BSS110 is a P-Channel enhancement mode field-effect transistor utilizing a high-density DMOS technology. This design minimizes on-state resistance and provides rugged, reliable performance with fast switching capabilities.
Key electrical characteristics include a Drain-Source Breakdown Voltage (BVDSS) of -50V and a continuous Drain Current (ID) of -0.17A at TA = 30/35°C. The Static Drain-Source On-Resistance (RDS(ON)) is 10Ω at VGS = -10V and ID = -0.17A. The Gate Threshold Voltage (VGS(th)) ranges from -0.8V to -2V.
With a maximum power dissipation of 0.63W at TA = 25°C and a junction-to-ambient thermal resistance of 200°C/W, the BSS110 is suitable for applications requiring up to 0.17A DC and can handle pulsed currents up to 0.68A. Its operating and storage temperature range is -55°C to 150°C.
This MOSFET is particularly suited for low voltage applications requiring a low current high-side switch. Its high-density cell design contributes to low RDS(ON) and high saturation current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-0.17A
-50V
-0.8V to -2V
10Ω
-55 to 150°C
200°C/W