| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
325 pcs
|
325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
206 pcs
|
206 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The BSS100 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 220mA at Ta. The device has a maximum on-resistance of 6 Ohms at Id=220mA and Vgs=10V. The gate threshold voltage is 2V maximum at Id=1mA. The gate charge is 2 nC at Vgs=10V, and input capacitance is 60 pF at Vds=25V. The MOSFET is available in a through-hole mounting package, specifically the TO-226-3 (TO-92-3) with formed leads. The supplier device package is TO-92-3. This device is suitable for low-power switching and amplification circuits where low gate charge and capacitance are beneficial.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V maximum.
Through-hole TO-226-3 (TO-92-3) with formed leads.
Yes, it is listed as RoHS3 compliant, but this is unverified (low confidence).
220mA at Ta.
6 Ohms at Id=220mA, Vgs=10V.
2V maximum at Id=1mA.
2 nC at Vgs=10V.