| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Mounting Type | |
| Power Dissipation | |
| Reverse Recovery Time | |
| Tape & Reel |
The Infineon BSR606N is an N-channel, enhancement mode, logic-level MOSFET designed for small signal applications. It belongs to the OptiMOS™-3 family and is qualified according to AEC Q101 standards.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a gate threshold voltage typically ranging from 1.3V to 2.3V. The device offers a maximum continuous drain current of 2.3A at 25°C, decreasing to 1.8A at 70°C. Its on-state resistance is as low as 45mΩ typical at VGS=10V and ID=2.3A.
Dynamic characteristics include input capacitance (Ciss) of 494pF typical, output capacitance (Coss) of 131pF typical, and reverse transfer capacitance (Crss) of 10.2pF typical. The device also features a reverse diode with a continuous forward current of 0.9A and a typical forward voltage of 0.83V.
The BSR606N is supplied in a PG-SC59 package, suitable for surface mount applications. It is rated for avalanche energy and meets stringent environmental standards, being 100% lead-free, halogen-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 1.8V.
The maximum continuous drain current at 25°C is 2.3A.
The typical on-state resistance at VGS=10V and ID=2.3A is 45mW.
The package type is PG-SC59.
Yes, the BSR606N is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.