| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,789 pcs
|
3789 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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The NXP USA Inc. BSR58,215 is an N-Channel JFET designed for various electronic applications. It features a breakdown voltage of 40V and a maximum power dissipation of 250mW. The device operates at temperatures up to 150°C.
This JFET is housed in a compact SOT-23 (TO-236AB) surface-mount package, making it suitable for space-constrained designs. The detailed specifications include a typical drain current (Idss) of 8mA at 15V and a cutoff voltage (VGS off) of 800mV at 0.5nA. The on-resistance (RDS(On)) is typically 60 Ohms.
Environmental compliance includes RoHS3 status. The product is classified under Discrete Semiconductor Products and Transistors - Special Purpose categories.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage (V(BR)GSS) is 40 V.
The maximum power dissipation is 250 mW.
The operating temperature range is up to 150°C (TJ).
The BSR58,215 is supplied in a SOT-23 (TO-236AB) surface-mount package.