| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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125 pcs
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125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Power Dissipation |
The Infineon BSR316PH6327 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 360mA. The device has an on-state resistance (Rds(on)) of 1.8 Ohms at a gate-source voltage of 10V and a drain current of 0.36A. Its power dissipation is rated at 500mW.
This MOSFET is housed in an SC-59-3 package, suitable for surface-mount applications. The component is classified under RoHS3 compliance, with an MSL rating of 1 and REACH unaffected status. Its typical applications would leverage its P-channel characteristics for switching or amplification circuits where a 100V rating is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The continuous drain current is 360mA.
The typical on-state resistance is 1.8 Ohms at 10V Vgs and 0.36A Id.
The power dissipation is 500mW.
This MOSFET is in an SC-59-3 package.