BSR316PH6327 The Infineon BSR316PH6327 is a P-Channel MOSFET. It offers a 100V drain-source breakdown voltage and 360mA continuous drain current.
Mfr Part #:

BSR316PH6327

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon BSR316PH6327 is a P-Channel MOSFET. It offers a 100V drain-source breakdown voltage and 360mA continuous drain current.
✓ Total Stock: 125 pcs
$ Price Range: $3.03

BSR316PH6327 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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125 pcs
125 pcs On Request 1 On Request On Request On Request On Request On Request

BSR316PH6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Power Dissipation

BSR316PH6327 Description

Short technical summary and product information.

The Infineon BSR316PH6327 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 100V and a continuous drain current of 360mA. The device has an on-state resistance (Rds(on)) of 1.8 Ohms at a gate-source voltage of 10V and a drain current of 0.36A. Its power dissipation is rated at 500mW.

 

This MOSFET is housed in an SC-59-3 package, suitable for surface-mount applications. The component is classified under RoHS3 compliance, with an MSL rating of 1 and REACH unaffected status. Its typical applications would leverage its P-channel characteristics for switching or amplification circuits where a 100V rating is required.

BSR316PH6327 Quick Information

Product Type: MOSFET
Series: BSR316
Canonical Name: Infineon BSR316PH6327 P-Channel MOSFET
Subcategory: P-Channel

BSR316PH6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSR316PH6327 Estimated Pricing

Qty Low High
1+ $3.03 $3.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSR316PH6327 Features

  • 100V drain-source breakdown voltage
  • 360mA continuous drain current
  • 1.8 Ohm Rds(on) typical
  • 500mW power dissipation
  • SC-59-3 package

BSR316PH6327 Applications

  • Suitable for low-power load switching circuits.
  • Ideal for signal-level voltage translation.
  • Use in portable battery-powered devices.
  • Designed for compact PCB layouts.

BSR316PH6327 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the continuous drain current?

The continuous drain current is 360mA.

What is the typical on-state resistance?

The typical on-state resistance is 1.8 Ohms at 10V Vgs and 0.36A Id.

What is the power dissipation?

The power dissipation is 500mW.

What package is this MOSFET in?

This MOSFET is in an SC-59-3 package.

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