| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 3000 | On Request | On Request | On Request | On Request | On Request | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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480 pcs
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480 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
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The BSR19A from NXP Semiconductors is an NPN high voltage transistor suitable for general purpose switching and amplification applications, particularly in telephony. It is housed in a compact SOT23 plastic package.
This transistor offers a low current capability of up to 300 mA and high voltage ratings, with a collector-base voltage (VCBO) of up to 180 V for the BSR19A variant and 160 V for the BSR19. The collector-emitter voltage (VCEO) is rated up to 160 V for BSR19A and 140 V for BSR19.
Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 250 at 10 mA and 5 V, and a transition frequency (fT) of 100 to 300 MHz at 10 mA and 10 V. The device also has low leakage currents, with collector cut-off current (ICBO) typically in the nanoampere range at rated voltages.
Designed for surface mounting, the SOT23 package is standard for many electronic assemblies. The thermal resistance from junction to ambient is 500 K/W when mounted on an FR4 printed-circuit board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage (VCBO) of the BSR19A is 180 V.
The BSR19A is housed in a SOT23 package.
The maximum collector current (IC) is 300 mA.
The collector-emitter voltage (VCEO) is 160 V.
The transition frequency (fT) ranges from 100 to 300 MHz.