| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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12,500 pcs
|
12500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BSR18B is a PNP bipolar junction transistor designed for general purpose switching and amplification applications. Manufactured by ON Semiconductor, this transistor offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. With a power dissipation of 230mW, it is suitable for low-power circuits.
The transistor provides a DC current gain (hFE) of minimum 110 at 10mA collector current and 1V collector-emitter voltage. The saturation voltage is typically 400mV at 5mA base current and 50mA collector current, ensuring efficient switching performance.
The BSR18B is housed in a surface mount SOT-23-3 package, which is also available as TO-236-3 and SC-59. It supports an operating junction temperature range from -55°C to 150°C, making it suitable for a wide range of environments. The surface mount design allows for compact PCB layouts and automated assembly.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.03 | $0.03 |
| 6,000+ | $0.03 | $0.03 |
| 9,000+ | $0.02 | $0.02 |
| 15,000+ | $0.02 | $0.02 |
| 21,000+ | $0.02 | $0.02 |
| 30,000+ | $0.02 | $0.02 |
| 75,000+ | $0.02 | $0.02 |
| 150,000+ | $0.02 | $0.02 |
| 300,000+ | $0.02 | $0.02 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
SOT-23-3 (also available in TO-236-3 and SC-59).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant.
Minimum 110 at Ic=10mA, Vce=1V.
Maximum 400mV at Ib=5mA, Ic=50mA.
230 mW.