BSP92PH6327XTSA1 P-Channel MOSFET from Infineon with 250V drain-source breakdown voltage and -0.26A continuous drain current. Features low on-resistance of 12 Ohm at 10V gate drive.
Mfr Part #:

BSP92PH6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel MOSFET from Infineon with 250V drain-source breakdown voltage and -0.26A continuous drain current. Features low on-resistance of 12 Ohm at 10V gate drive.
✓ Total Stock: 3,020 pcs
$ Price Range: $0.21 - $1.02

BSP92PH6327XTSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request

BSP92PH6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP92PH6327XTSA1 Description

Short technical summary and product information.

The BSP92PH6327XTSA1 is a P-Channel enhancement mode MOSFET from Infineon's SIPMOS family, designed for small-signal applications. It features a drain-source breakdown voltage of -250V and continuous drain current of -0.26A at 25°C. The device offers a maximum on-resistance of 12 Ohm at VGS=-10V and ID=-0.26A, with a typical value of 7.5 Ohm. It supports logic-level gate drive with a maximum gate threshold voltage of -2V at ID=-130µA.

 

This MOSFET is dv/dt rated and qualified according to AEC Q101, making it suitable for automotive applications. It is halogen-free per IEC61249-2-21. The total gate charge is 5.4 nC, and input capacitance is 104 pF, enabling efficient switching. Switching times include a turn-on delay of 8 ns, rise time of 9 ns, turn-off delay of 101 ns, and fall time of 50 ns.

 

The device is housed in a PG-SOT223-4 surface-mount package (TO-261-4, TO-261AA) and supports a maximum power dissipation of 1.8W at 25°C. Operating junction temperature range is -55°C to 150°C. Thermal resistance from junction to ambient is 115 K/W (max) on a standard PCB footprint.

BSP92PH6327XTSA1 Quick Information

Product Type: P-Channel MOSFET
Series: SIPMOS
Canonical Name: Infineon BSP92PH6327XTSA1 P-Channel MOSFET, 250V, -0.26A, SOT223-4
Subcategory: Small-Signal MOSFET

BSP92PH6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP92PH6327XTSA1 Estimated Pricing

Qty Low High
1+ $1.02 $1.02
10+ $0.63 $0.63
100+ $0.41 $0.41
500+ $0.32 $0.32
1,000+ $0.29 $0.29
2,000+ $0.25 $0.25
5,000+ $0.22 $0.22
10,000+ $0.22 $0.22
25,000+ $0.21 $0.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP92PH6327XTSA1 Features

  • P-Channel enhancement mode MOSFET.
  • 250V drain-source breakdown voltage.
  • Low on-resistance of 12 Ohm.
  • Logic level gate drive (2.8V).
  • AEC Q101 qualified for automotive.

BSP92PH6327XTSA1 Applications

  • Suitable for high-voltage DC-DC converters.
  • Used in load switch applications.
  • Ideal for battery management systems.
  • Applicable in automotive electronics.

BSP92PH6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSP92PH6327XTSA1?

The drain-source breakdown voltage is -250V.

What is the package type for this MOSFET?

The package is PG-SOT223-4 (TO-261-4, TO-261AA) for surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSP92PH6327XTSA1 RoHS compliant?

It is listed as RoHS3 Compliant, but this is unverified and low confidence.

What is the gate threshold voltage?

The maximum gate threshold voltage is -2V at ID=-130µA, with a typical value of -1.5V.

What is the maximum power dissipation?

Maximum power dissipation is 1.8W at 25°C ambient temperature.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified according to AEC Q101.

Home
Account

Categories