| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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635 pcs
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635 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSP89L6327 is an N-Channel MOSFET manufactured by N-A. This component is designed for discrete semiconductor applications and features a maximum drain-to-source voltage of 240V and a continuous drain current of 350mA at 25°C.
Key electrical characteristics include a gate source threshold voltage of 1.8V (maximum) at 108µA and a maximum on-resistance of 6 Ohm at 350mA and 10V. The device also has an input capacitance of 140pF (maximum) at 25V and a gate charge of 6.4nC (maximum) at 10V.
With a maximum power dissipation of 1.8W (Ta) and an operating temperature range of -55°C to 150°C (TJ), the BSP89L6327 is suitable for various thermal conditions. The MOSFET utilizes Metal Oxide (MOSFET) technology and belongs to the SIPMOS® series.
This component is supplied in a Tape & Reel (TR) package and is designed for surface mounting. The package/case is identified as SOT-223 and also TO-261-4, TO-261AA, with a supplier device package of PG-SOT223-4.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 240V.
The continuous drain current is 350mA at 25°C.
The gate source threshold voltage is 1.8V maximum at 108µA.
The maximum on-resistance is 6 Ohm at 350mA and 10V.
The operating temperature range is -55°C to 150°C.
The BSP89L6327 is an N-Channel MOSFET.
The BSP89L6327 is supplied in a Tape & Reel (TR) package, with package/case identified as SOT-223 and TO-261-4, TO-261AA.