BSP89H6327XTSA1 N-Channel MOSFET from Infineon, 240V Vds, 350mA Id, Rds(on) 6 Ohm at 10V. Surface mount in SOT223-4 package.
Mfr Part #:

BSP89H6327XTSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET from Infineon, 240V Vds, 350mA Id, Rds(on) 6 Ohm at 10V. Surface mount in SOT223-4 package.
✓ Total Stock: 5,020 pcs
$ Price Range: $0.20 - $0.96

BSP89H6327XTSA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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5,020 pcs
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BSP89H6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP89H6327XTSA1 Description

Short technical summary and product information.

The BSP89H6327XTSA1 is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 240V and a continuous drain current of 350mA at ambient temperature. The on-resistance is specified at 6 Ohms maximum with a gate drive of 10V and 350mA drain current, making it suitable for low-power switching applications.

 

Key electrical characteristics include a maximum gate threshold voltage of 1.8V at 108µA drain current, allowing logic-level drive capability. The input capacitance is 140pF at 25V drain-source, and the total gate charge is 6.4nC at 10V gate voltage. Maximum power dissipation is 1.8W at ambient temperature, and the device can operate over a junction temperature range of -55°C to 150°C.

 

The MOSFET is offered in a surface-mount package: TO-261-4 or TO-261AA, commonly referred to as SOT223-4. The supplier device package is PG-SOT223-4. This compact package is ideal for space-constrained designs requiring moderate voltage and current handling.

BSP89H6327XTSA1 Quick Information

Product Type: Single N-Channel MOSFET
Series: SIPMOS
Canonical Name: N-Channel MOSFET 240V 350mA SOT223-4
Subcategory: N-Channel

BSP89H6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP89H6327XTSA1 Estimated Pricing

Qty Low High
1+ $0.96 $0.96
10+ $0.60 $0.60
100+ $0.39 $0.39
500+ $0.30 $0.30
1,000+ $0.27 $0.27
2,000+ $0.23 $0.23
5,000+ $0.20 $0.20
25,000+ $0.20 $0.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP89H6327XTSA1 Features

  • N-Channel enhancement mode MOSFET.
  • 240V drain-source breakdown voltage.
  • 350mA continuous drain current.
  • Low gate charge of 6.4 nC.
  • Surface mount SOT223-4 package.

BSP89H6327XTSA1 Applications

  • Low power load switching applications.
  • Power management in battery devices.
  • Level shifting and driver circuits.

BSP89H6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSP89H6327XTSA1?

240 V.

What is the continuous drain current?

350 mA at ambient temperature.

What is the on-resistance (Rds(on))?

6 Ohm max at Id=350mA, Vgs=10V.

What is the gate threshold voltage?

Maximum 1.8V at Id=108µA.

What is the operating temperature range?

-55°C to 150°C.

What package is the BSP89H6327XTSA1 available in?

Surface mount TO-261-4/TO-261AA, also known as SOT223-4. Supplier device package PG-SOT223-4.

Is the BSP89H6327XTSA1 RoHS compliant?

RoHS3 Compliant (unverified, low confidence).

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