| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP88H6327XTSA1 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a drain-to-source breakdown voltage of 240 V and a continuous drain current of 350 mA at 25°C ambient temperature. The maximum drain-source on-resistance is 6 Ohm at 350 mA drain current and 10 V gate-source voltage.
The device offers a gate threshold voltage up to 1.4 V at 108 µA drain current and supports a gate-source voltage range of ±20 V. With a maximum gate charge of 6.8 nC at 10 V and input capacitance of 95 pF at 25 V drain-source voltage, it is suitable for switching applications requiring moderate speed and low drive power.
Packaged in the surface-mount TO-261-4 (PG-SOT223-4) package, the device operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 1.8 W at 25°C ambient. The compact SOT-223 footprint enables efficient PCB layout in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.95 | $0.95 |
| 10+ | $0.59 | $0.59 |
| 100+ | $0.38 | $0.38 |
| 500+ | $0.29 | $0.29 |
| 1,000+ | $0.26 | $0.26 |
| 2,000+ | $0.23 | $0.23 |
| 5,000+ | $0.21 | $0.21 |
| 10,000+ | $0.20 | $0.20 |
| 25,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
240 V
350 mA at 25°C ambient temperature
6 Ohm at 350 mA drain current and 10 V gate-source voltage
-55°C to 150°C junction temperature
TO-261-4, TO-261AA (PG-SOT223-4)
RoHS3 Compliant (unverified)
1.4 V at 108 µA drain current