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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
64,000 pcs
|
64000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
236 pcs
|
236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BSP50 is an NPN Darlington transistor manufactured by On Semiconductor, designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage (Vceo) of 45V and a maximum collector current (Ic) of 800mA, with a power dissipation of 1W.
This Darlington pair offers a high DC current gain (hFE) of at least 2000 at Ic=500mA and Vce=10V, enabling high sensitivity with low base drive requirements. The collector-emitter saturation voltage (Vce(sat)) is 1.3V maximum at Ib=500µA and Ic=500mA.
The device is housed in a surface-mount SOT-223-4 package (TO-261-4, TO-261AA), suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C. The BSP50 is RoHS3 compliant, though this status is unverified.
| Qty | Low | High |
|---|---|---|
| 1,249+ | $0.24 | $0.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 45V maximum.
The BSP50 is supplied in a TO-261-4 / TO-261AA (SOT-223-4) surface mount package.
The junction operating temperature range is -55°C to 150°C.
The BSP50 is listed as RoHS3 compliant, but this status is unverified and should be confirmed.
The minimum DC current gain (hFE) is 2000 at Ic=500mA, Vce=10V.
The maximum collector current (Ic) is 800mA.
The maximum collector-emitter saturation voltage (Vce(sat)) is 1.3V at Ib=500µA, Ic=500mA.