| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSP33 is a PNP silicon planar medium power transistor manufactured by NXP Semiconductors. It is designed for general-purpose applications requiring medium power handling capabilities.
Key electrical characteristics include a maximum collector-base voltage (V_CBO) of -90V and a maximum collector-emitter voltage (V_CEO) of -80V. The device can handle a continuous collector current (I_C) of -1A and a peak pulse current (I_CM) of -2A. Power dissipation at an ambient temperature of 25°C is rated at 2W (P_TOT).
This transistor features a transition frequency (f_T) of 100MHz and a static forward current transfer ratio (h_FE) of up to 300. Saturation voltages are specified, with V_CE(sat) at -0.5V and V_BE(sat) at -1.2V under specific test conditions. Capacitance values include collector capacitance (C_C) of 20pF and emitter capacitance (C_E) of 120pF.
The BSP33 is housed in a SOT-223 surface-mount package, suitable for automated assembly processes. The operating and storage temperature range is from -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V_CEO) for the BSP33 is -80V.
The continuous collector current (I_C) rating for the BSP33 is -1A.
The power dissipation (P_TOT) of the BSP33 at an ambient temperature of 25°C is 2W.
The operating and storage temperature range for the BSP33 is -55°C to +150°C.
The BSP33 is supplied in a SOT-223 package.
The recommended replacement parts for the obsolete BSP33 are FZT591 and FZT593.