BSP324L6327 N-Channel power MOSFET from Infineon Technologies. Features 400V drain-source voltage, 170mA continuous drain current, and 25 Ohm on-resistance.
Mfr Part #:

BSP324L6327

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET from Infineon Technologies. Features 400V drain-source voltage, 170mA continuous drain current, and 25 Ohm on-resistance.
✓ Total Stock: 5,000 pcs
$ Price Range: $1.24

BSP324L6327 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request 0828+ On Request On Request

BSP324L6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP324L6327 Description

Short technical summary and product information.

The BSP324L6327 is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It is designed for low-power switching applications requiring high voltage capability. Key electrical specifications include a drain-source voltage (Vdss) of 400V, continuous drain current of 170mA at ambient temperature, and a maximum on-resistance of 25 Ohm at a gate drive of 10V. The device features a gate threshold voltage of 2.3V maximum at 94µA drain current, low gate charge of 5.9nC, and input capacitance of 154pF at 25V drain-source voltage. Maximum power dissipation is 1.8W at ambient temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is housed in a surface mount TO-261-4 package (also known as SOT-223) with a supplier device package designation of PG-SOT223-4-21. This package is suitable for automated assembly and compact PCB layouts. The part is listed as RoHS3 compliant and REACH unaffected, though these compliance statuses are unverified.

BSP324L6327 Quick Information

Product Type: Power MOSFET
Canonical Name: Infineon Technologies BSP324L6327 N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

BSP324L6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSP324L6327 Estimated Pricing

Qty Low High
241+ $1.24 $1.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP324L6327 Features

  • N-Channel MOSFET with 400V drain-source voltage.
  • 170mA continuous drain current rating.
  • 25 Ohm maximum on-resistance at 10V gate drive.
  • Surface mount SOT-223 package for compact designs.
  • Operating temperature range -55°C to 150°C.

BSP324L6327 Applications

  • Low-power offline switching power supplies.
  • Relay and solenoid driver circuits.
  • Load switching in industrial control systems.
  • Gate drive circuits for higher power MOSFETs.

BSP324L6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the BSP324L6327?

-55°C to 150°C (junction temperature).

What package is the BSP324L6327 available in?

Surface mount TO-261-4 (SOT-223) package, also known as PG-SOT223-4-21.

Is the BSP324L6327 RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum drain-source voltage of this MOSFET?

400V.

What is the continuous drain current rating?

170mA at ambient temperature.

What is the maximum on-resistance?

25 Ohm at 170mA and 10V gate drive.

What is the gate threshold voltage?

Maximum 2.3V at 94µA drain current.

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