BSP322PH6327XTSA1 P-Channel enhancement mode MOSFET, rated for 100V drain-source and 1A continuous drain current. Available in a surface-mount SOT-223 package.
Mfr Part #:

BSP322PH6327XTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
P-Channel enhancement mode MOSFET, rated for 100V drain-source and 1A continuous drain current. Available in a surface-mount SOT-223 package.
✓ Total Stock: 1,094 pcs
$ Price Range: $0.31 - $1.33

BSP322PH6327XTSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,077 pcs
1077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
17 pcs
17 pcs On Request 1 On Request On Request On Request On Request On Request

BSP322PH6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP322PH6327XTSA1 Description

Short technical summary and product information.

The BSP322PH6327XTSA1 is a P-Channel enhancement mode MOSFET from Infineon's SIPMOS family. It is designed for automotive and industrial applications requiring high efficiency and reliability. Key electrical characteristics include a maximum drain-source voltage of -100V and a continuous drain current of 1A at 25°C case temperature. The device features logic-level gate drive with a threshold voltage range of -2V to -1V. Drain-source on-resistance is specified at 800 mΩ maximum with VGS = -10V and 1000 mΩ maximum with VGS = -4.5V, enabling low conduction losses.

 

Switching performance is supported by low gate charge (12.4 nC typical total) and fast switching times (turn-on delay 4.6 ns, rise time 4.3 ns typical). Input capacitance is 280 pF typical at VDS = -25V. The device is avalanche rated and includes a body diode with 47 ns reverse recovery time.

 

Packaged in a PG-SOT-223 (SOT-223) surface-mount package, the MOSFET is supplied in tape and reel (1000 pcs/reel). Thermal resistance from junction to ambient is 115 K/W for minimal footprint and 70 K/W with a 6 cm² copper cooling area. The component is AEC Q101 qualified, RoHS compliant, and halogen-free per IEC 61249-2-21.

BSP322PH6327XTSA1 Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: BSP322PH6327XTSA1 - P-Channel MOSFET, 100V, 1A, SOT-223
Subcategory: P-Channel

BSP322PH6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP322PH6327XTSA1 Estimated Pricing

Qty Low High
1+ $1.33 $1.33
10+ $0.84 $0.84
100+ $0.55 $0.55
500+ $0.43 $0.43
1,000+ $0.39 $0.39
2,000+ $0.34 $0.34
5,000+ $0.33 $0.33
10,000+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP322PH6327XTSA1 Features

  • P-Channel enhancement mode MOSFET.
  • Rated for 100V drain-source voltage.
  • 1A continuous drain current at 25°C.
  • Logic level gate drive (VGS(th) -2V to -1V).
  • AEC Q101 qualified for automotive applications.

BSP322PH6327XTSA1 Applications

  • Power management in automotive systems.
  • High-side load switching.
  • DC-DC converter circuits.
  • Battery protection circuits.

BSP322PH6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating?

The maximum drain-source voltage is -100 V (100V absolute).

What is the package type?

SOT-223 (PG-SOT-223) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is this component RoHS compliant?

Yes, it is RoHS compliant and also halogen-free per IEC 61249-2-21.

What is the gate threshold voltage range?

-2V to -1V (typical -1.5V) at VDS=VGS, ID=-380µA.

What is the drain-source on-resistance?

Maximum 800 mΩ at VGS=-10V, ID=-1A; 1000 mΩ at VGS=-4.5V, ID=-0.93A.

Is this MOSFET automotive qualified?

Yes, it is qualified according to AEC Q101.

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