| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,222 pcs
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3222 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BSP320SL6327 is an N-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for small-signal switching applications. Key electrical characteristics include a drain-source voltage (Vdss) of 60V, continuous drain current of 2.9A, and maximum on-resistance of 120mOhm at Vgs=10V and Id=2.9A. The device features a gate threshold voltage of 4V at 20µA and a maximum gate charge of 12nC at 10V. Input capacitance is 340pF at Vds=25V. The MOSFET can dissipate up to 1.8W at ambient temperature and operates over a junction temperature range of -55°C to 150°C. It is housed in a surface-mount TO-261-4 (SOT-223) package with supplier device package PG-SOT223-4-21. This component is suitable for low-power switching and signal amplification circuits where space is constrained.
60V.
2.9A.
120mOhm at 2.9A, 10V.
-55°C to 150°C.
TO-261-4 (SOT-223).
RoHS3 compliant (unverified).
4V at 20µA.