BSP318S E6327 Infineon BSP318S E6327 is an N-Channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 2.6A continuous drain current. It comes in a surface-mount SOT223-4 package.
Mfr Part #:

BSP318S E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSP318S E6327 is an N-Channel enhancement mode MOSFET with 60V drain-source breakdown voltage and 2.6A continuous drain current. It comes in a surface-mount SOT223-4 package.
✓ Total Stock: 7,000 pcs

BSP318S E6327 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,000 pcs
7000 pcs On Request 1 On Request On Request 09+ On Request On Request

BSP318S E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSP318S E6327 Description

Short technical summary and product information.

The Infineon BSP318S E6327 is an N-Channel enhancement mode MOSFET from the SIPMOS small-signal transistor family. It features a drain-source breakdown voltage of 60V and a continuous drain current of 2.6A at 25°C ambient temperature. The device is logic level compatible with drive voltages of 4.5V and 10V, and offers a typical drain-source on-state resistance of 0.07Ω at VGS=10V.

 

This MOSFET is avalanche rated and dv/dt rated, making it suitable for applications requiring ruggedness. It has a maximum power dissipation of 1.8W at 25°C and an operating junction temperature range of -55°C to 150°C. The device is qualified according to AEC Q101 and is RoHS compliant with Pb-free lead plating.

 

The BSP318S E6327 is supplied in a PG-SOT223-4 surface-mount package with gull wing terminals, packaged in tape and reel with 1000 pieces per reel. It is designed for general purpose switching applications in automotive and industrial environments.

BSP318S E6327 Quick Information

Product Type: MOSFET
Series: BSP318S
Canonical Name: BSP318S E6327 N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Enhancement Mode

BSP318S E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

BSP318S E6327 Features

  • N-Channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • 2.6A continuous drain current at 25°C.
  • Avalanche rated and dv/dt rated.
  • AEC Q101 qualified for automotive use.

BSP318S E6327 Applications

  • Used in automotive electronic control units.
  • Suitable for DC-DC converter circuits.
  • Ideal for load switching applications.
  • Applicable in power management systems.

BSP318S E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSP318S E6327?

The drain-source breakdown voltage is 60V minimum.

What is the continuous drain current rating?

The continuous drain current is 2.6A at 25°C ambient temperature.

What package does the BSP318S E6327 come in?

It comes in a PG-SOT223-4 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSP318S E6327 RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

What is the typical on-resistance at 10V gate drive?

The typical drain-source on-state resistance is 0.07Ω at VGS=10V and ID=2.6A.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified according to AEC Q101.

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