| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,480 pcs
|
1480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP317PH6327XTSA1 is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the SIPMOS small-signal transistor family. It is designed for applications requiring a high-voltage P-Channel switch with logic-level gate drive capability.
Key electrical characteristics include a minimum drain-source breakdown voltage of -250 V, maximum continuous drain current of -0.43 A at 25°C case temperature, and a maximum on-state resistance of 4 Ω (at VGS=-10 V, ID=-0.43 A). The device features a gate threshold voltage range of -1 V to -2 V and is specified for gate drive voltages of 4.5 V and 10 V. Switching performance is defined with typical turn-on delay of 8.5 ns, rise time of 11.1 ns, turn-off delay of 254 ns, and fall time of 67 ns. Gate charge is 15.1 nC total.
The device is housed in a PG-SOT223-4 surface mount package (also known as TO-261-4) and is supplied in tape and reel packaging with 1000 pieces per reel. It is qualified according to AEC Q101 for automotive applications, halogen-free per IEC61249-2-21, and has an operating junction temperature range of -55°C to 150°C. Thermal resistance is specified for minimal footprint and for 6 cm² cooling area.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.39 | $1.39 |
| 10+ | $0.88 | $0.88 |
| 50+ | $0.65 | $0.65 |
| 100+ | $0.58 | $0.58 |
| 500+ | $0.45 | $0.45 |
| 1,000+ | $0.41 | $0.41 |
| 3,000+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage (V(BR)DSS) is -250 V at VGS=0, ID=-250 µA.
The device is housed in a PG-SOT223-4 surface mount package (also known as TO-261-4 or TO-261AA).
The operating junction temperature range is -55°C to 150°C.
It is marked as RoHS3 compliant, but this information has not been independently verified.
Yes, it is qualified according to AEC Q101.
The gate threshold voltage (VGS(th)) ranges from -1 V (minimum) to -2 V (maximum), with a typical value of -1.5 V at ID=-370 µA.
The maximum RDS(on) is 4 Ω at VGS=-10 V, ID=-0.43 A, and 5 Ω at VGS=-4.5 V, ID=-0.39 A.