| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,794 pcs
|
1794 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Tape & Reel |
The Infineon BSP317P is a P-Channel enhancement mode MOSFET from the SIPMOS family. It is designed for small signal and small power applications, featuring logic-level gate compatibility.
Key electrical characteristics include a drain-source breakdown voltage of -250V and a maximum continuous drain current of -0.43A at 25°C. The on-state resistance (RDS(on)) is specified as 3.3 Ohms to 5 Ohms at VGS=-4.5V and 3 Ohms to 4 Ohms at VGS=-10V. Dynamic characteristics such as input capacitance (Ciss) are around 210-262 pF, and output capacitance (Coss) is 30-37 pF.
This MOSFET is housed in a PG-SOT223 package, suitable for surface mounting. It operates within a temperature range of -55°C to +150°C. The device is also noted as being halogen-free.
With its P-channel configuration and logic-level gate, the BSP317P is suitable for various switching and amplification tasks in electronic circuits where a negative voltage swing is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-250V
3.3 Ohms at VGS=-4.5V, ID=-0.39A
PG-SOT223
-55°C to +150°C
RoHS3 Compliant
1 Unlimited
Yes, it is a P-Channel MOSFET.