| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 1028 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP316PL6327 is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. This device is designed for low-voltage load switching and power management applications.
Key electrical characteristics include a drain-source voltage (Vds) of 100V, a continuous drain current (Id) of 680mA, and a maximum drain-source on-resistance (Rds(on)) of 1.8 Ohm at Vgs = 10V and Id = 680mA. The gate charge is 6.4 nC at Vgs = 10V, and input capacitance is 146 pF at Vds = 25V. The gate threshold voltage (Vgs(th)) is 2V maximum at Id = 170 µA, and the device supports drive voltages of 4.5V and 10V.
This MOSFET is housed in a surface mount TO-261-4 (SOT-223) package, specifically the PG-SOT223-4-21 supplier package. It has a maximum power dissipation of 1.8W and operates over a junction temperature range of -55°C to 150°C. The device is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).
The drain-source voltage (Vdss) is 100V.
The continuous drain current is 680 mA at Ta.
The maximum on-resistance is 1.8 Ohm at Id = 680 mA and Vgs = 10V.
It is available in a TO-261-4 (SOT-223) surface mount package, specifically the PG-SOT223-4-21.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this data is unverified.
The maximum gate threshold voltage is 2V at Id = 170 µA.