| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
56 pcs
|
56 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The BSP315P-E6327 is a P-Channel enhancement mode MOSFET from Infineon, designed for small-signal switching applications. It features a drain-source voltage rating of -60V and a continuous drain current of 1.17A at 25°C.
Key electrical characteristics include a low on-resistance of 0.5Ω typical at VGS=-10V and 0.8Ω maximum. The device is avalanche rated with a single pulse avalanche energy of 24mJ. It offers logic level gate drive with a gate threshold voltage range of -1V to -2V.
The MOSFET is housed in a surface mount SOT-223 package (PG-SOT223-4). It supports operating junction temperatures from -55°C to +150°C and has a maximum power dissipation of 1.8W at 25°C.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.29 | $0.29 |
| 2,000+ | $0.26 | $0.26 |
| 3,000+ | $0.25 | $0.25 |
| 5,000+ | $0.23 | $0.23 |
| 7,000+ | $0.22 | $0.22 |
| 10,000+ | $0.22 | $0.22 |
| 25,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is minimum -60V.
It comes in the SOT-223 (TO-261-4, TO-261AA) surface mount package, with supplier device package PG-SOT223-4.
The operating junction temperature range is -55°C to +150°C.
The part is marked as RoHS3 compliant, but this status is unverified and should be confirmed from official documentation.
Typical on-resistance is 0.5Ω at VGS=-10V, ID=-1.17A; maximum is 0.8Ω.
The gate threshold voltage ranges from -1V (minimum) to -2V (maximum), with a typical value of -1.5V at ID=-160µA.
The continuous drain current is 1.17A at 25°C ambient, derated to 0.94A at 70°C.