BSP295E6327 Infineon BSP295E6327 is an N-Channel enhancement mode MOSFET rated at 60V and 1.8A. It features low on-resistance and is qualified to AEC Q101 for automotive applications.
Mfr Part #:

BSP295E6327

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Infineon BSP295E6327 is an N-Channel enhancement mode MOSFET rated at 60V and 1.8A. It features low on-resistance and is qualified to AEC Q101 for automotive applications.
✓ Total Stock: 9,000 pcs
$ Price Range: $0.27 - $0.36

BSP295E6327 Available from 1 distributor

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✓ Non-Authorised
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BSP295E6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP295E6327 Description

Short technical summary and product information.

The Infineon BSP295E6327 is an N-Channel enhancement mode MOSFET from the SIPMOS family, designed for small signal and small power switching applications. With a drain-source breakdown voltage of 60V and a continuous drain current of 1.8A at 25°C ambient, it provides efficient switching in a compact surface-mount package.

 

Key electrical characteristics include a maximum on-resistance of 300mΩ at 10V gate drive (500mΩ at 4.5V), gate threshold voltage of 1.8V maximum, and fast switching times (turn-on delay 8.1ns, rise time 15ns). The device also features integrated ESD protection (HBM class 1B) and a reverse diode with 45ns recovery time.

 

The BSP295E6327 is housed in a PG-SOT223-4 package (TO-261-4) with gull wing leads, supporting surface mount assembly. It is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified to AEC Q101, making it suitable for automotive environments. Thermal resistance is 115 K/W (junction-to-ambient on minimum footprint) and 25 K/W (junction-to-soldering point).

BSP295E6327 Quick Information

Product Type: MOSFET
Series: BSP295
Canonical Name: Infineon BSP295E6327 N-Channel MOSFET
Subcategory: Small Signal MOSFET

BSP295E6327 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP295E6327 Estimated Pricing

Qty Low High
1,000+ $0.36 $0.36
2,000+ $0.33 $0.33
3,000+ $0.32 $0.32
5,000+ $0.30 $0.30
7,000+ $0.29 $0.29
10,000+ $0.28 $0.28
25,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP295E6327 Features

  • 60V drain-source breakdown voltage.
  • 1.8A continuous drain current at 25°C.
  • Low 300mΩ on-resistance at 10V VGS.
  • Surface mount SOT223-4 package.
  • AEC Q101 qualified for automotive.

BSP295E6327 Applications

  • Used in automotive engine control modules.
  • Ideal for DC-DC converters and power supplies.
  • Suitable for load switch and power management.
  • Designed for small signal switching circuits.

BSP295E6327 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 60V.

What package type is the BSP295E6327?

It is available in a PG-SOT223-4 package (TO-261-4).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the BSP295E6327 RoHS compliant?

Yes, it is RoHS3 compliant per the datasheet.

What is the continuous drain current rating?

The continuous drain current is 1.8A at 25°C ambient temperature.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1.8V at a drain current of 400µA.

Is this MOSFET qualified for automotive applications?

Yes, it is qualified according to AEC Q101.

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