SQ2325ES-T1-GE3
Vishay
The Vishay Dale SQ2325ES-T1-GE3 is a P-Channel MOSFET designed for automotive applications. It offers a 150V drain-source voltage and a continuous drain current of -0.84A.
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3,951 pcs
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3951 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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812 pcs
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812 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors BSP250 is a P-channel enhancement mode vertical D-MOS transistor designed for power switching applications. It offers high-speed switching capabilities and no secondary breakdown.
Key electrical specifications include a drain-source voltage (Vds) of -30V, a gate-source voltage (Vgs) of ±20V, and a gate-source threshold voltage (Vgs(th)) between -1V and -2.8V. The drain current (Id) is rated up to 3A, with a low drain-source on-state resistance (Rds(on)) of 0.25Ω at a gate-source voltage of -10V and a drain current of -1A.
Thermal performance is supported by a total power dissipation (Ptot) of 5W at 100°C. The device is housed in a SOT-223 plastic SMD package, suitable for surface mounting.
Applications include low-loss motor and actuator drivers, and general power switching.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the BSP250 is -30V.
The drain-source on-state resistance (Rds(on)) is 0.25Ω when measured at a drain current of -1A and a gate-source voltage of -10V.
The total power dissipation (Ptot) for the BSP250 is 5W at a case temperature of 100°C.
The BSP250 is supplied in a SOT-223 plastic SMD package.
Key features include high-speed switching, no secondary breakdown, and very low on-resistance, making it suitable for low-loss motor and actuator drivers.