| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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48 pcs
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48 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSP225 is a P-channel enhancement mode vertical D-MOS transistor designed for applications requiring high-speed switching and direct interface to C-MOS and TTL logic. It is housed in a miniature SOT-223 package.
Key electrical characteristics include a drain-source voltage of up to 250V and a continuous drain current of 225mA. The device boasts a low drain-source on-resistance of 15 Ohms at a drain current of 200mA and a gate-source voltage of 10V. The gate-source threshold voltage is typically 2.8V at a drain current of 1mA with VGS = VDS.
This MOSFET is intended for use in relay drivers, high-speed drivers, and line transformer drivers. Its design ensures no secondary breakdown, contributing to reliable operation in demanding applications. The SOT-223 package is suitable for surface-mount designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 250 V.
The typical gate-source threshold voltage is 2.8 V.
The drain-source on-resistance is a maximum of 15 Ω.
The BSP225 is supplied in a SOT-223 package.