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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The BSP19TA is an NPN bipolar junction transistor manufactured by Diodes Incorporated, designed for general-purpose switching and amplification applications. It features a maximum collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA, making it suitable for medium-voltage circuits.
Key electrical characteristics include a DC current gain (hFE) of at least 50 at Ic=100mA and Vce=5V, a maximum Vce saturation voltage of 500mV at Ib=4mA and Ic=50mA, and a transition frequency of 70MHz. The device can dissipate up to 2W of power and operates over a junction temperature range of -55°C to 150°C.
The transistor is housed in a TO-261-4 (TO-261AA) package with a supplier device package designation of SOT-223-3, designed for surface-mount assembly. This compact package is well-suited for space-constrained PCB designs requiring medium-power handling.
Typical applications include switching circuits, driver stages, and amplifier circuits where the 350V breakdown voltage and 500mA current capability provide adequate headroom for medium-voltage designs. The 70MHz transition frequency supports moderate-speed switching applications.
The maximum collector-emitter breakdown voltage is 350V.
The maximum collector current is 500mA.
The maximum power dissipation is 2W.
It is available in a TO-261-4 (TO-261AA) package with a supplier device package of SOT-223-3 for surface-mount mounting.
The operating junction temperature range is -55°C to 150°C.
The minimum DC current gain is 50, measured at Ic=100mA and Vce=5V.
The transition frequency is 70MHz.