| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia BSP19,115 is a single NPN bipolar junction transistor (BJT) designed for high-voltage applications. It offers a maximum collector-emitter voltage (Vceo) of 350V and a maximum collector current (Idc) of 100mA.
Key electrical characteristics include a maximum collector-base voltage (VCBO) of 400V, a maximum power dissipation (Pd) of 1.2W, and a minimum DC current gain (hFE) of 40. The transistor operates within a temperature range of -65°C to 150°C.
Packaged in a surface-mount SOT-223 package, the BSP19,115 is suitable for various electronic circuits requiring high voltage handling capabilities. Its automotive standard compliance with AEC-Q101 indicates suitability for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the BSP19,115 is 350V.
The maximum DC collector current (Idc) for the BSP19,115 is 100mA.
The BSP19,115 transistor comes in a SOT-223 surface mount package.
The BSP19,115 transistor can operate between -65°C and 150°C.
The RoHS status is RoHS3 Compliant.