| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 0528- | On Request | On Request |
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The FZT694B from Philips is a high-gain NPN silicon planar transistor designed for medium power applications. It features a maximum collector-emitter voltage (VCEO) of 120V and a maximum collector current (IC) of 1.0A. The transistor exhibits a high typical gain (hFE) of 400 when operating at a collector current of 200mA, and a low saturation voltage (VCE(sat)) of 0.6V at 200mA and 0.2V at 10mA.
This device is suitable for applications requiring Darlington replacement or as a relay/solenoid driver due to its high gain and low saturation voltage characteristics. It operates at frequencies up to 50MHz.
The FZT694B is housed in a surface-mount SOT-223 package, making it suitable for automated assembly processes. Its maximum power dissipation is rated at 2.0W, and it can operate within a temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum VCEO is 120V.
The maximum continuous collector current is 1.0A.
The absolute maximum power dissipation is 2.0W.
The BSP19 is available in a SOT-223 surface mount package.
The typical hFE is 400 at a collector current of 200mA.
The typical transition frequency is 50MHz.
The maximum operating junction temperature is 150°C.