BSP171PH6327XTSA1 The BSP171PH6327XTSA1 is a P-Channel enhancement mode MOSFET from Infineon Technologies. It features a 60V drain-source breakdown voltage and 1.9A continuous drain current in a SOT223-4 package.
Mfr Part #:

BSP171PH6327XTSA1

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The BSP171PH6327XTSA1 is a P-Channel enhancement mode MOSFET from Infineon Technologies. It features a 60V drain-source breakdown voltage and 1.9A continuous drain current in a SOT223-4 package.
✓ Total Stock: 12,774 pcs
$ Price Range: $0.29 - $1.25

BSP171PH6327XTSA1 Available from 3 distributors

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✓ Non-Authorised
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12,020 pcs
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679 pcs
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75 pcs
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BSP171PH6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

BSP171PH6327XTSA1 Description

Short technical summary and product information.

The BSP171PH6327XTSA1 is a P-Channel enhancement mode MOSFET built with Infineon's SIPMOS technology. It is designed for logic level gate drive with a maximum Rds(on) of 0.3 Ω at Vgs = -10 V and 0.45 Ω at Vgs = -4.5 V. The device features a drain-source breakdown voltage of -60 V (minimum) and a continuous drain current of -1.9 A at 25°C ambient. It can handle pulsed drain currents up to -7.6 A.

 

This MOSFET has a gate threshold voltage range of -1 V to -2 V, making it suitable for low-voltage switching. The total gate charge is typically 13 nC, enabling fast switching transitions. Input capacitance is 365 pF typical, and output capacitance is 105 pF typical. The device is rated for a maximum power dissipation of 1.8 W at 25°C ambient.

 

The BSP171PH6327XTSA1 is supplied in a PG-SOT223-4 surface mount package (also designated TO-261-4 or TO-261AA). It is RoHS3 compliant, halogen-free according to IEC 61249-2-21, and has Pb-free lead plating. The operating junction temperature range is -55°C to 150°C. It is qualified according to AEC Q101 for automotive applications.

BSP171PH6327XTSA1 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Infineon BSP171PH6327XTSA1 P-Channel MOSFET, 60V, 1.9A, SOT223-4
Subcategory: Single P-Channel MOSFET

BSP171PH6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP171PH6327XTSA1 Estimated Pricing

Qty Low High
1+ $1.25 $1.25
10+ $0.78 $0.78
100+ $0.52 $0.52
500+ $0.40 $0.40
1,000+ $0.36 $0.36
2,000+ $0.32 $0.32
5,000+ $0.29 $0.29
10,000+ $0.29 $0.29

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP171PH6327XTSA1 Features

  • P-Channel enhancement mode MOSFET.
  • 60V drain-source breakdown voltage.
  • 1.9A continuous drain current.
  • Low Rds(on) of 0.3Ω at 10V.
  • Logic level gate drive (4.5V).

BSP171PH6327XTSA1 Applications

  • Load switching in low-voltage systems.
  • Power management for portable electronics.
  • Battery protection and switching.
  • General purpose MOSFET switching.

BSP171PH6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The minimum drain-source breakdown voltage is -60 V.

What is the package type?

The package is PG-SOT223-4 (also designated TO-261-4 or TO-261AA).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Yes, it is RoHS3 compliant and halogen-free according to IEC 61249-2-21.

What is the continuous drain current?

The continuous drain current is -1.9 A at 25°C ambient temperature.

What is the gate threshold voltage?

The gate threshold voltage ranges from -1 V (minimum) to -2 V (maximum), with a typical value of -1.5 V.

What is the power dissipation?

Maximum power dissipation is 1.8 W at 25°C ambient temperature.

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