Mfr Part #:

BSP170P H6327

Mfr Name: Infineon

The Infineon BSP170P H6327 is a P-Channel Trench MOSFET designed for power switching applications. It features a 60V drain-source voltage and a continuous drain current of 1.9A.

✓ Total Stock: 11,586 pcs

$ Price Range: $1.76

BSP170P H6327 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	9,613 pcs On Request	9613 pcs	On Request	1	On Request	On Request	21+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,751 pcs On Request	1751 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	222 pcs On Request	222 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

BSP170P H6327 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
FET Type	P-Channel Trench
Power Dissipation	1.8 W @ Ta
Storage Temperature	°C ~ °C
Tape & Reel	No

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BSP170P H6327 Description

Short technical summary and product information.

The Infineon BSP170P H6327 is a P-Channel Trench MOSFET housed in a SOT-223 package. It offers a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 1.9A at 25°C. The MOSFET has a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum on-resistance (Rds(on)) of 300mΩ at 1.9A and 10V gate-source voltage.

With a maximum power dissipation of 1.8W at Ta, this component is suitable for various power management tasks. Its P-Channel Trench FET type and SOT-223 package make it a versatile choice for designers working on applications requiring efficient power switching and control.

This MOSFET is part of Infineon's range of discrete semiconductor products. Its specifications make it a candidate for use in power supplies, motor control circuits, and other general-purpose switching applications where a P-channel MOSFET is required.

BSP170P H6327 Quick Information

Product Type: MOSFET

Canonical Name: Infineon BSP170P H6327 P-Channel Trench MOSFET

Subcategory: P-Channel Trench MOSFET

BSP170P H6327 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

BSP170P H6327 Estimated Pricing

Qty	Low	High
1+	$1.76	$1.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP170P H6327 Features

P-Channel Trench MOSFET design.
60V drain-source voltage rating.
1.9A continuous drain current.
300mΩ maximum on-resistance.
SOT-223 surface-mount package.

BSP170P H6327 Applications

Suitable for power switching circuits.
Used in power management designs.
Applicable for general purpose switching.
Ideal for motor control modules.

BSP170P H6327 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage for the BSP170P H6327 MOSFET?

The drain-source voltage (Vds) for the BSP170P H6327 is 60V.

What is the continuous drain current of the BSP170P H6327?

The continuous drain current (Id) is 1.9A at 25°C.

What is the on-resistance of the BSP170P H6327 MOSFET?

The maximum on-resistance (Rds(on)) is 300mΩ at 1.9A drain current and 10V gate-source voltage.

What package type is the BSP170P H6327 MOSFET supplied in?

The BSP170P H6327 MOSFET is supplied in a SOT-223 package.

What is the RoHS status of the BSP170P H6327?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the BSP170P H6327?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.