| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| FET Type | |
| Gate Charge | |
| Mounting Type | |
| Power Dissipation (Max) | |
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| Tape & Reel | |
| Technology |
The Infineon Technologies BSP149H6906XTSA1 is an N-Channel MOSFET belonging to the SIPMOS® series. It is designed for special purpose applications and features a drain-to-source voltage of 200V and a continuous drain current of 660mA at 25°C.
This MOSFET utilizes Metal Oxide technology and has an on-resistance of 1.8 Ohms at 660mA and 10V gate-source voltage. The gate threshold voltage is a maximum of 1V at 400µA, and the maximum gate source voltage is ±20V. The maximum power dissipation is 1.8W at ambient temperature.
The component is supplied in a PG-SOT223-4 surface mount package. The packaging options include Cut Tape (CT) and Digi-Reel®. This MOSFET is suitable for various electronic circuits requiring high voltage switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.88 | $1.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 200V.
The continuous drain current is 660mA.
The maximum on-resistance is 1.8 Ohms at 660mA and 10V.
The maximum gate threshold voltage is 1V at 400µA.
The maximum gate source voltage is ±20V.
It is an N-Channel MOSFET.
It is supplied in a PG-SOT223-4 surface mount package.