BSP149H6327XTSA1 N-Channel depletion mode MOSFET from Infineon, rated for 200V drain-source voltage and 660mA continuous drain current. Offered in a surface-mount SOT223-4 package.
Mfr Part #:

BSP149H6327XTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel depletion mode MOSFET from Infineon, rated for 200V drain-source voltage and 660mA continuous drain current. Offered in a surface-mount SOT223-4 package.
✓ Total Stock: 63,588 pcs
$ Price Range: $0.38 - $1.63

BSP149H6327XTSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
63,020 pcs
63020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
568 pcs
568 pcs On Request 1 On Request On Request On Request On Request On Request

BSP149H6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSP149H6327XTSA1 Description

Short technical summary and product information.

The BSP149H6327XTSA1 is an N-channel depletion mode MOSFET from Infineon's SIPMOS family. It is designed for a drain-source voltage of 200V and a continuous drain current of 660mA at 25°C. The device features a maximum on-state resistance of 1.8 Ohms at Vgs=10V and 660mA, and a typical gate threshold voltage of -1.4V (depletion mode).

 

This MOSFET is qualified according to AEC Q101 and is RoHS compliant with Pb-free lead plating. It is halogen-free according to IEC61249-2-21. The device is offered in a PG-SOT223-4 surface-mount package and is supplied in tape and reel packaging with 1000 pieces per reel.

 

Key electrical characteristics include an input capacitance of 430pF (max) at Vds=25V, a maximum gate charge of 14nC at Vgs=5V, and a maximum power dissipation of 1.8W at 25°C. The operating junction temperature range is -55°C to 150°C.

BSP149H6327XTSA1 Quick Information

Product Type: MOSFET
Series: SIPMOS
Canonical Name: BSP149H6327XTSA1 - N-Channel Depletion Mode MOSFET, 200V, 660mA, SOT223-4
Subcategory: Single MOSFET

BSP149H6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSP149H6327XTSA1 Estimated Pricing

Qty Low High
1+ $1.63 $1.63
10+ $0.89 $0.89
100+ $0.63 $0.63
500+ $0.51 $0.51
1,000+ $0.44 $0.44
2,000+ $0.40 $0.40
5,000+ $0.38 $0.38
10,000+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSP149H6327XTSA1 Features

  • N-channel depletion mode MOSFET.
  • 200V drain-source voltage rating.
  • 660mA continuous drain current.
  • 1.8 Ohm max on-state resistance.
  • Surface-mount SOT223-4 package.

BSP149H6327XTSA1 Applications

  • Used in normally-on switching circuits.
  • Suitable for current source applications.
  • Ideal for load switch designs.
  • Applicable in automotive electronics.

BSP149H6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the BSP149H6327XTSA1?

The drain-source voltage (Vdss) is 200V.

What is the continuous drain current rating?

The continuous drain current is 660mA at 25°C ambient temperature.

What is the package type for this MOSFET?

The device is offered in a PG-SOT223-4 surface-mount package.

Is the BSP149H6327XTSA1 RoHS compliant?

Yes, it is RoHS compliant with Pb-free lead plating.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The gate threshold voltage is negative, ranging from -2.1V (min) to -1.0V (max), with a typical value of -1.4V.

What is the maximum on-state resistance?

The maximum on-state resistance is 1.8 Ohms at Vgs=10V and Id=660mA.

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