Mfr Part #:

BSP149H6327XTSA1

Name: BSP149H6327XTSA1
Brand: Infineon Technologies
SKU: BSP149H6327XTSA1
Availability: InStock

Description:

MOSFET N-CH 200V 660MA SOT223-4

✓ Total Stock: 63,588 pcs

BSP149H6327XTSA1 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	568 pcs On Request	568 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	63,020 pcs On Request	63020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

MOSFET N-CH 200V 660MA SOT223-4

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

Infineon Technologies

MOSFET N-CH 200V 660MA SOT223-4

BSP149 E6327

Infineon Technologies

MOSFET N-CH 200V 660MA SOT223-4

BSP149 E6906

Infineon Technologies

MOSFET N-CH 200V 660MA SOT223-4

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	660mA (Ta)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
FET Feature	Depletion Mode
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.8W (Ta)
Rds On (Max) @ Id, Vgs	1.8Ohm @ 660mA, 10V
Supplier Device Package	PG-SOT223-4
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1V @ 400µA